Multi-cell apparatus and method for single ion addressing

ABSTRACT

A multi-cell apparatus and method for single ion addressing are described herein. One apparatus includes a first cell configured to set a frequency, intensity, and a polarization of a laser and shutter the laser, a second cell configured to align the shuttered laser to an ion in an ion trap such that the ion fluoresces light and/or performs a quantum operation, and a third cell configured to detect the light fluoresced from the ion.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to U.S. application Ser. No.14/686,553, filed Apr. 14, 2015, the specification of which is hereinincorporated by reference.

STATEMENT OF GOVERNMENT RIGHTS

This invention was made with Government support under contract:W911NF-12-1-0605, awarded by the U.S. Army. The Government has certainrights in this invention.

TECHNICAL FIELD The present disclosure relates to a multi-cell apparatusand method for single ion addressing. BACKGROUND

An ion trap can use a combination of electrical and magnetic fields totrap (e.g., capture) an ion (e.g., a positively or negatively chargedatom or molecule). When an ion trapped in an ion trap is illuminated bya laser (e.g. when a laser beam is focused onto the ion in the trap),the ion may fluoresce light or perform a quantum operation. The lightfluoresced from the ion can be detected by a detector.

Multiple ion traps can be formed on a chip (e.g., die). However, inprevious approaches, each additional ion trap (e.g., each additionaltrapped ion) may necessitate additional structure (e.g., hardware)and/or space, including, for instance, additional lasers. For example,in previous approaches there may be a linear (e.g., one-to-one)relationship between the number of ions and the number of lasers (e.g.,each additional ion may necessitate an additional laser).

Further, previous approaches may not be able to achieve single ionaddressing or detecting. That is, previous approaches may not be able toindividually address multiple ions such that the light fluoresced fromonly a single ion at a time can be detected by the detector.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an example apparatus for single ion addressing inaccordance with one or embodiments of the present disclosure.

FIGS. 2A and 2B illustrate a portion of a preparation cell of anapparatus for single ion addressing in accordance with one orembodiments of the present disclosure.

FIG. 3 illustrates a portion of an alignment cell of an apparatus forsingle ion addressing in accordance with one or embodiments of thepresent disclosure.

DETAILED DESCRIPTION

A multi-cell apparatus and method for single ion addressing aredescribed herein. For example, one or more embodiments include a firstcell configured to set a frequency, intensity, and a polarization of alaser and shutter the laser, a second cell configured to align theshuttered laser to an ion in an ion trap such that the ion fluoresceslight and/or performs a quantum operation, and a third cell configuredto detect the light fluoresced from the ion.

Embodiments in accordance with the present disclosure can achieve singleion addressing. That is, embodiments in accordance with the presentdisclosure can individually address multiple ions (e.g., ions trapped inmultiple ion traps or zones of a single trap) such that the lightfluoresced from only a single ion at a time can be detected by adetector.

Further, embodiments in accordance with the present disclosure may havea non-linear relationship between the number of trapped ions and thenumber of lasers needed for interacting with the ions. For example, inembodiments of the present disclosure, a single laser can be used tointeract with multiple ions (e.g., a single laser can be used formultiple ions or ion traps).

As such, embodiments of the present disclosure can realize scalabilityin achieving single ion addressing. For example, embodiments of thepresent disclosure can achieve single ion addressing without using asignificant amount of additional structure (e.g., hardware) and/or spaceas compared to previous approaches.

In the following detailed description, reference is made to theaccompanying drawings that form a part hereof. The drawings show by wayof illustration how one or more embodiments of the disclosure may bepracticed.

These embodiments are described in sufficient detail to enable those ofordinary skill in the art to practice one or more embodiments of thisdisclosure. It is to be understood that other embodiments may beutilized and that mechanical, electrical, and/or process changes may bemade without departing from the scope of the present disclosure.

As will be appreciated, elements shown in the various embodiments hereincan be added, exchanged, combined, and/or eliminated so as to provide anumber of additional embodiments of the present disclosure. Theproportion and the relative scale of the elements provided in thefigures are intended to illustrate the embodiments of the presentdisclosure, and should not be taken in a limiting sense.

The figures herein follow a numbering convention in which the firstdigit or digits correspond to the drawing figure number and theremaining digits identify an element or component in the drawing.Similar elements or components between different figures may beidentified by the use of similar digits. For example, 104 may referenceelement “04” in FIG. 1, and a similar element may be referenced as 304in FIG. 3.

As used herein, “a” or “a number of” something can refer to one or moresuch things. For example, “a number of lasers” can refer to one or morelasers.

FIG. 1 illustrates an example apparatus 100 for single ion addressing inaccordance with one or embodiments of the present disclosure. As shownin FIG. 1, apparatus 100 can include a first cell (e.g., optical cell)102, a second cell (e.g., optical cell) 104, and a third cell (e.g.,optical cell) 106. That is, cells 102, 104, and 106 can be threeseparate cells. Cell 102 can be referred to as a preparation cell, cell104 can be referred to as an alignment cell, and cell 106 can bereferred to as a detection cell. As shown in FIG. 1, cells 102 and 106can be outside a vacuum (e.g., vacuum chamber) 108, and cell 104 can beinside vacuum 108.

Cell 102 (e.g., the preparation cell) can set a frequency, intensity,and a polarization of a laser (e.g., a laser beam), and shutter thelaser. In some embodiments, cell 102 may prepare the state of the laser,and in some embodiments, the state of the laser may already be preparedbefore the laser enters cell 102, as will be further described herein(e.g., in connection with FIGS. 2A and 2B). Cell 102 will be furtherdescribed herein (e.g., in connection with FIGS. 2A and 2B).

In some embodiments, the laser may be a Doppler cooling laser (e.g., alaser used in a Doppler cooling mechanism), and in some embodiments thelaser may be a quantum operation laser (e.g., a laser used in a quantumoperation, such as Raman cooling, state preparation, photoionization,loading, and/or ion transitions, for instance). In both suchembodiments, the laser may be a 369 nanometer (nm) laser for a ytterbiumion. However, embodiments of the present disclosure are not limited to aparticular type of laser. For example, embodiments of the presentdisclosure may include different types or frequencies of lasers fordifferent types of ions or different operations.

Cell 104 (e.g., the alignment cell) can align the shuttered laser to(e.g., focus the shuttered laser on) an ion trapped in an ion trap forinteraction with the ion to cause, for example, the ion to fluoresce(e.g., emit) light and/or perform a quantum operation. Cell 104 canreceive the light fluoresced from the ion. Cell 104 will be furtherdescribed herein (e.g., in connection with FIG. 3).

In some embodiments, the ion in the ion trap can be a ytterbium (Yb)ion. However, embodiments of the present disclosure are not limited to aparticular type of ion.

Cell 106 (e.g., the detection cell) can receive (e.g., collect) thelight fluoresced from the ion from cell 104, and detect (e.g., measure)the light fluoresced from the ion. For example, cell 106 can include anarray of photo-multiplier tubes that can detect the light (e.g.,photons) fluoresced from the ion. However, embodiments are not limitedto a particular type of detection cell.

As shown in FIG. 1, apparatus 100 can include a first fiber bundle 110and a second fiber bundle 114. Fiber bundle 110 can split an incidentlaser into a plurality of components before the laser enters cell 102.For instance, fiber bundle 110 can split the laser into a plurality offibers (e.g., wires) 112-1, 112-2, 112-3, 112-4 (e.g., each lasercomponent can propagate through a different fiber) before the laser(e.g., the laser components) enters cell 102, as illustrated in FIG. 1.That is, the fibers split, and each fiber enters cell 102 separately, asillustrated in FIG. 1. Although the embodiment illustrated in FIG. 1includes four fibers, embodiments of the present disclosure are notlimited to a particular number of fibers.

As shown in FIG. 1, fiber bundle 114 can bundle (e.g., re-bundle) theplurality of fibers 112-1, 112-2, 112-3, and 112-4 after the laser(e.g., after the fibers) exits cell 102 and before the laser (e.g.,before the fibers) enters vacuum 108. For clarity and so as not toobscure embodiments of the present disclosure, only fibers 112-1 and112-2 are shown being bundled by fiber bundle 114 in FIG. 1. The laser(e.g., the bundled fibers) can then enter vacuum 108 through fiberbundle 114, as illustrated in FIG. 1.

After the laser (e.g., after the fibers) enters vacuum 108, fiber bundle114 can split (e.g., re-split) the plurality of fibers 112-1, 112-2,112-3, 112-4, as shown in FIG. 1. For clarity and so as not to obscureembodiments of the present disclosure, only fibers 112-1, and 112-2 areshown being split by fiber bundle 114 in FIG. 1. The laser (e.g., there-split fibers) can then enter cell 104. That is, the fibers re-split,and each fiber enters cell 104 separately, as illustrated in FIG. 1.

The light fluoresced from the ion can exit cell 104 through one or moreof an additional plurality of fibers (e.g., wires) 116-1, 116-2, asillustrated in FIG. 1. Although the embodiment illustrated in FIG. 1includes two such additional fibers, embodiments of the presentdisclosure are not limited to a particular number of such additionalfibers.

As shown in FIG. 1, fiber bundle 114 can bundle the additional pluralityof fibers 116-1, 116-2, (e.g., the fiber(s) having the light fluorescedfrom the ion) before the light fluoresced from the ion (e.g., before thefibers) exit vacuum 114. After the light fluoresced from the ion (e.g.,after the fibers) exits vacuum 108, fiber bundle 114 can split (e.g.,re-split) the additional plurality of fibers 116-1, 116-2, as shown inFIG. 1. The light fluoresced from the ion (e.g., the re-split fibers)can then enter cell 106. That is, the fibers re-split, and each fiberenters cell 106 separately, as illustrated in FIG. 1.

The number of ions a single laser can individually address usingapparatus 100 may depend on three factors: the power of the illuminatinglaser, the laser power needed at the ion for the desired interaction,and the loss caused by the components within cell 102 that set thefrequency, intensity, and polarization of the laser, shutter the laser,and prepare the state of the laser (e.g., the electro-optic modulator(EOM), the acousto-optic modulator (AOM), and the Pockels cell describedin connection with FIGS. 2A and 2B). For example, the total transmissionT_(tot) in cell 102 can be given by:

T _(tot) =T _(EOM) T _(AOM) T _(Pockets)=0.3*0.7*0.99=0.2

where T_(EOM), T_(AOM), and T_(Pockets) are the estimated transmissionsof the EOM, AOM, and Pockels cell, respectively. The power at the ionΦ_(ion) can then be given by:

Φ_(ion) =T _(tot)Φ_(laser)=0.2*Φ_(laser)

where Φ_(laser) is the power of the laser. The number of ions N that the=l laser can individually address can be given by:

N=Φ _(ion)/Φ_(required)=(0.2*Φ_(laser))/Φ_(required)

where clip Φ_(required) is the laser power needed at the ion for the ioninteraction. These equations can be solved to estimate the number ofions that can be simultaneously addressed.

FIG. 2A illustrates a portion of a preparation cell of an apparatus200-1 for single ion addressing in accordance with one or embodiments ofthe present disclosure, and FIG. 2B illustrates a portion of apreparation cell of an apparatus 200-2 for single ion addressing inaccordance with one or embodiments of the present disclosure. Apparatus200-1 and/or apparatus 200-2 can be, for example, apparatus 100previously described in connection with FIG. 1. For example, as shown inFIGS. 2A and 2B, apparatus 200-1 can include preparation cell 202-1, andapparatus 200-2 can include preparation cell 202-2. Preparation cell202-1 and/or preparation cell 202-2 can be, for example, preparationcell 102 previously described in connection with FIG. 1.

As shown in FIGS. 2A and 2B, apparatus 200-1 includes a laser (e.g.,incident laser) 220-1, and apparatus 200-2 includes a laser (e.g.,incident laser) 220-2. Laser 220-1 can be a Doppler cooling laser (e.g.,a laser used in a Doppler cooling mechanism), and laser 220-2 can be aquantum operation laser (e.g., a laser used in a quantum operation, suchas Raman cooling, state preparation, photoionization, loading, and/orion transitions, for instance). That is, the embodiment illustrated inFIG. 2A can include a Doppler cooling laser, and the embodimentillustrated in FIG. 2B can include a quantum operation laser. In bothsuch embodiments, the laser may be a 369 nanometer (nm) laser. However,embodiments of the present disclosure are not limited to a particulartype of laser.

As shown in FIGS. 2A and 2B, apparatuses 200-1 and 200-2 can eachinclude an electro-optic modulator 222. In the embodiment illustrated inFIG. 2A, electro-optic modulator 220 is separate from (e.g., locatedoutside of) preparation cell 202-1, and in the embodiment illustrated inFIG. 2B, electro-optic modulator 220 is included in (e.g., locatedwithin) preparation cell 202-2. In the embodiment illustrated in FIG.2A, electro-optic modulator 222 may be a 7.37 GHz electro-opticmodulator, and in the embodiment illustrated in FIG. 2B, electro-opticmodulator 222 may be a 2.1 GHz electro-optic modulator. However,embodiments of the present disclosure are not limited to a particulartype of electro-optic modulator.

In the embodiment illustrated in FIG. 2A, electro-optic modulator 222can prepare the state of laser 220-1 (e.g., the state of a laser beamemitted by laser 220-1), and in the embodiment illustrated in FIG. 2B,electro-optic modulator 222 can prepare the state of laser 220-2 (e.g.,the state of a laser beam emitted by laser 220-2). For example,electro-optic modulator 222 can generate large spacing sidebands for thestate preparation, and address hyperfine transitions.

In the embodiment illustrated in FIG. 2A, electro-optic modulator 222can prepare the state of laser 220-1 before the laser enters preparationcell 202-1. That is, in the embodiment illustrated in FIG. 2A, the stateof the laser may already be prepared when the laser enters preparationcell 202-1.

For example, after electro-optic modulator 222 prepares the state of thelaser, and before the laser enters preparation cell 202-1, the laser maysplit into a plurality of components (e.g., fibers) 212-1, 212-2, 212-3,212-4 that separately enter preparation cell 202-1, as illustrated inFIG. 2A. That is, in the embodiment illustrated in FIG. 2A,electro-optic modulator 222 may be placed before preparation cell 202-1and before the fiber split occurs. Because all the Doppler cooling beamsmay require the same frequency, locating electro-optic modulator 222 insuch a manner can reduce the complexity of apparatus 200-1, as it maymean apparatus 200-1 may need only one electro-optic modulator (e.g.,instead of needing a separate electro-optic modulator for each Dopplercooling beam). Components 212-1, 212-2, 212-3, and 212-4 can be, forexample, fibers 112-1, 112-2, 112-3, 112-2 previously described inconnection with FIG. 1.

Laser 220-1 may be split into components (e.g., fibers) 212-1, 212-2,212-3, 212-4 by, for example, a fiber bundle (not shown in FIG. 2A),such as, for instance, fiber bundle 110 previously described inconnection with FIG. 1. Although the embodiment illustrated in FIG. 2Aincludes four fibers, embodiments of the present disclosure are notlimited to a particular number of fibers.

In the embodiment illustrated in FIG. 2B, electro-optic modulator 222can prepare the state of laser 220-2 after the laser enters preparationcell 202-2. That is, in the embodiment illustrated in FIG. 2B,preparation cell 202-2 may prepare the state of the laser.

For example, the laser may split into a plurality of components (e.g.,fibers) 212-1, 212-2, 212-3, 212-4 before the laser enters preparationcell 202-2 and before electro-optic modulator 222 prepares the state ofthe laser, such that each component separately enters preparation cell202-1 and electro-optic modulator 222, as illustrated in FIG. 2B. Thatis, in the embodiment illustrated in FIG. 2B, electro-optic modulator222 may be placed within preparation cell 202-2 and after the fibersplit occurs.

For clarity and so as not to obscure embodiments of the presentdisclosure, a single electro-optic modulator 222 is illustrated in FIG.2B. However, preparation cell 202-2 may include a separate electro-opticmodulator for each component 212-1, 212-2, 212-3, 212-4 (e.g., component212-1 may enter a first electro-optic modulator in preparation cell202-2, component 212-2 may enter a second electro-optic modulator inpreparation cell 202-2, etc.). As such, each electro-optic modulator mayhave individual control, and prepare the state, of each beam component,allowing for state preparation of individual quantum and giving eachbeam component the ability to set and interrogate ytterbium's hyperfinequantum states. Components 212-1, 212-2, 212-3, and 212-4 can be, forexample, fibers 112-1, 112-2, 112-3, 112-2 previously described inconnection with FIG. 1.

Laser 220-2 may be split into components (e.g., fibers) 212-1, 212-2,212-3, 212-4 by, for example, a fiber bundle (not shown in FIG. 2B),such as, for instance, fiber bundle 110 previously described inconnection with FIG. 1. Although the embodiment illustrated in FIG. 2Bincludes four fibers, embodiments of the present disclosure are notlimited to a particular number of fibers.

As shown in FIGS. 2A and 2B, preparation cells 202-1 and 202-2 can eachinclude an acousto-optic modulator 224. For instance, preparation cells202-1 and 202-2 can include an individual (e.g., separate) acousto-opticmodulator for each laser component 212-1, 212-2, 212-3, 212-4, in amanner analogous to the separate electro-optic modulators of preparationcell 202-2. In the embodiments illustrated in FIGS. 2A and 2B,acousto-optic modulator 224 can be 200 MHz acousto-optic modulator.However, embodiments of the present disclosure are not limited to aparticular type of acousto-optic modulator.

In the embodiment illustrated in FIG. 2A, acousto-optic modulator 224can set the frequency and intensity of laser 220-1 and shutter laser220-1 (e.g., each separate acousto-optic modulator can set the frequencyand intensity of and shutter its respective laser component 212-1,212-2, 212-3, 212-4) after electro-optic modulator 222 prepares thestate of laser 220. In the embodiment illustrated in FIG. 2B,acousto-optic modulator 224 can set the frequency and intensity of laser220-2 and shutter laser 220-2 (e.g., each separate acousto-opticmodulator can set the frequency and intensity of and shutter itsrespective laser component 212-1, 212-2, 212-3, 212-4) afterelectro-optic modulator 222 prepares the state of laser 220 (e.g., aftereach separate electro-optic modulator prepares the state of itsrespective laser component 212-1, 212-2, 212-3, 212-4). Light leakagefrom acousto-optic modulator 224 (e,g, from the shutter of theacousto-optic modulator) can be controlled using a radio-frequency (RF)switch (not shown in FIGS. 2A and 2B).

As shown in FIGS. 2A and 2B, preparation cells 202-1 and 202-2 can eachinclude a Pockels cell 226 (e.g., a voltage-controlled wave plate). Forinstance, preparation cells 202-1 and 202-2 can include an individual(e.g., separate) Pockels cell for each laser component 212-1, 212-2,212-3, 212-4, in a manner analogous to the separate electro-opticmodulators of preparation cell 202-2.

In the embodiment illustrated in FIG. 2A, Pockels cell 226 can set thepolarization of laser 220-1 (e.g., each separate Pockels cell can setthe polarization of its respective laser component 212-1, 212-2, 212-3,212-4) after acousto-optic modulator 224 sets the frequency andintensity of laser 220-1 and shutters laser 220-1. In the embodimentillustrated in FIG. 2B, Pockels cell 226 can set the polarization oflaser 220-2 (e.g., each respective Pockels cell can set the polarizationof its respective laser component 212-1, 212-2, 212-3, 212-4) afteracousto-optic modulator 224 sets the frequency and intensity of laser220-2 and shutters laser 220-2. For instance, Pockels cell 226 can beused to prevent electro-optic modulator 222 and/or acousto-opticmodulator 224 from disturbing the polarization state of the laser sinceit is placed after these two devices.

As shown in FIGS. 2A and 2B, laser components 212-1, 212-2, 212-3, 212-4may bundle (e.g., re-bundle) after exiting preparation cells 202-1 and202-2, respectively. The bundled components (e.g., fibers) may thenenter a vacuum (e.g., vacuum 108 previously described in connection withFIG. 1) and travel to an alignment cell (e.g., alignment cell 104previously described in connection with FIG. 1). Laser components 212-1,212-2, 212-3, 212-4 may be bundled by, for example, an additional fiberbundle (not shown in FIGS. 2A and 2B), such as, for instance, fiberbundle 114 previously described in connection with Figure

FIG. 3 illustrates a portion of an alignment cell 304 of an apparatusfor single ion addressing in accordance with one or embodiments of thepresent disclosure. Alignment cell 304 can be, for example, alignmentcell 104 of apparatus 100 previously described in connection with FIG.1.

As shown in FIG. 3, a first component 320-1 and a second component 320-2of a laser (e.g., laser beam) from a preparation cell (e.g., preparationcell 102 previously described in connection with FIG. 1) can enteralignment cell 304. For example, laser component 320-1 can enter (e.g.be input into) alignment cell 304 from a first fiber (e.g., fiber 112-1previously described in connection with FIG. 1), and laser component320-2 can enter alignment cell from a second fiber (e.g., fiber 112-2previously described in connection with FIG. 1), as previously describedherein (e.g., in connection with FIG. 1).

Laser component 320-1 can be a component of laser 220-1 previouslydescribed in connection with FIG. 2A, and laser component 320-2 can be acomponent of laser 220-2 previously described in connection with FIG.2B. That is, in the embodiment illustrated in FIG. 3, laser component320-1 can be a component of a Doppler cooling laser, and laser component320-2 can be a component of a quantum operation laser. However,embodiments of the present disclosure are not limited to a particulartype of laser.

As shown in FIG. 3, alignment cell 304 can include a first lens 332-1and a second lens 332-2. Lenses 332-1 and 332-2 can be, for example,ball lenses. Further, the focal length of lenses 332-1 and 332-2 can beset to garner a particular beam waist and location for a given ionoperation.

As shown in FIG. 3, lens 332-1 can focus laser component 320-1, anddirect laser component 320-1 at mirror 334-1 formed (e.g., placed) onthe surface of chip (e.g., die) 346. Lens 332-2 can focus lasercomponent 320-2, and direct laser component 320-2 at mirror 334-1 formedon the surface of chip 346. The distance between the centers of lenses332-1 and 332-2 and the surface of chip 346 can be, for example, threemillimeters (mm).

As shown in FIG. 3, mirror 334-1 can direct (e.g., reflect) the focusedlaser component 320-1 at ion 336-1 trapped in an ion trap formed on chip346, such that ion 336-1 is illuminated by focused laser component320-1. Mirror 334-2 can direct the focused laser component 320-2 at ion336-2 that may be trapped in an additional ion trap formed on chip 346,such that ion 336-2 is illuminated by focused laser component 320-2.

The distance between mirror 334-1 and ion 336-1, and the distancebetween mirror 334-2 and ion 336-2, can be, for example, 2.5 mm. Thedistance between ion 336-1 and 336-2 can be, for example, 0.5 mm. Ions336-1 and 336-2 can be, for example, Yb ions. However, embodiments ofthe present disclosure are not limited to a particular type of ion.

As shown in FIG. 3, ion 336-2 may fluoresce (e.g., emit) light 338and/or perform a quantum operation when illuminated by focused lasercomponent 320-2. Fluoresced light 338 can be received (e.g., coupled) bylens 340 of alignment cell 304, as illustrated in FIG. 3. Lens 340 canbe, for example, a ball lens having a diameter of 2 mm. Further, thefocal length of lens 340 can be set to couple fluoresced light 338 intoa fiber (e.g., output fiber) exiting alignment cell 304.

As shown in FIG. 3, fluoresced light 338 can exit alignment cell 304after being received (e.g., coupled) by lens 340, and travel to adetection cell (e.g., detection cell 106 previously described inconnection with FIG. 1). For example, fluoresced light 338 can exit(e.g. be output from) alignment cell 304, and travel to the detectioncell, through a fiber (e.g., fiber 116-1 or 116-2 previously describedin connection with FIG. 1), as previously described herein (e.g., inconnection with FIG. 1).

As shown in FIG. 3, mirror 342-1 formed on the surface of chip 346 candirect (e.g., reflect) laser component 320-1 at beam dump 344 ofalignment cell 304 after laser component 320-1 is aligned to (e.g.,focused at), and illuminates, ion 336-1. Mirror 342-2 formed on thesurface of chip 346 can direct laser component 320-2 at beam dump 344after laser component 320-2 is aligned to, and illuminates, ion 336-2.

Laser components 320-1 and 320-2 can terminate at (e.g., upon reaching)beam dump 344. Terminating laser components 320-1 and 320-2 at beam dump344 can mitigate stray light and/or heating in alignment cell 304.

Alignment cell 304 may be designed as a unit cell that can be repeatedacross an array (e.g., a 2D array) of ion traps formed on chip 346. Thatis, the embodiment illustrated in FIG. 3 can be repeated across an arrayof ion traps formed on chip 346. However, only one alignment cell 304has been shown in FIG. 3 for clarity and so as not to obscureembodiments of the present disclosure.

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anyarrangement calculated to achieve the same techniques can be substitutedfor the specific embodiments shown. This disclosure is intended to coverany and all adaptations or variations of various embodiments of thedisclosure.

It is to be understood that the above description has been made in anillustrative fashion, and not a restrictive one. Combination of theabove embodiments, and other embodiments not specifically describedherein will be apparent to those of skill in the art upon reviewing theabove description.

The scope of the various embodiments of the disclosure includes anyother applications in which the above structures and methods are used.Therefore, the scope of various embodiments of the disclosure should bedetermined with reference to the appended claims, along with the fullrange of equivalents to which such claims are entitled.

In the foregoing Detailed Description, various features are groupedtogether in example embodiments illustrated in the figures for thepurpose of streamlining the disclosure. This method of disclosure is notto be interpreted as reflecting an intention that the embodiments of thedisclosure require more features than are expressly recited in eachclaim.

Rather, as the following claims reflect, inventive subject matter liesin less than all features of a single disclosed embodiment. Thus, thefollowing claims are hereby incorporated into the Detailed Description,with each claim standing on its own as a separate embodiment.

What is claimed:
 1. An apparatus for single ion addressing, comprising:a first cell configured to: set a polarization of a laser; and shutterthe laser; and a second cell configured to align the shuttered laser toan ion in an ion trap such that the ion fluoresces light and/or performsa quantum operation.
 2. The apparatus of claim 1, wherein the apparatusincludes a third cell configured to detect the light fluoresced from theion.
 3. The apparatus of claim 1, wherein the first cell is configuredto set a frequency of the laser.
 4. The apparatus of claim 1, whereinthe first cell is configured to set an intensity of the laser.
 5. Theapparatus of claim 1, wherein the second cell is inside a vacuum.
 6. Theapparatus of claim 1, wherein the apparatus includes a fiber bundleconfigured to split the laser into a plurality of fibers before thelaser enters the first cell.
 7. The apparatus of claim 6, wherein theapparatus includes an additional fiber bundle configured to: bundle theplurality of fibers after the laser exits the first cell; and re-splitthe bundled fibers before the laser enters the second cell.
 8. A methodfor single ion addressing, comprising: shuttering a laser using a firstcell; and aligning the shuttered laser to an ion in an ion trap using asecond cell such that the ion fluoresces light and/or performs a quantumoperation.
 9. The method of claim 8, wherein the method includespreparing a state of the laser before shuttering the laser.
 10. Themethod of claim 9, wherein the method includes preparing the state ofthe laser using an electro-optic modulator.
 11. The method of claim 8,wherein the method includes shuttering the laser using an acousto-opticmodulator of the first cell.
 12. The method of claim 8, wherein themethod includes aligning the shuttered laser to the ion in the ion trapusing a lens of the second cell and a mirror of the second cell.
 13. Themethod of claim 8, wherein the method includes aligning the shutteredlaser to an additional ion in an additional ion trap using the secondcell such that the additional ion fluoresces light and/or performs aquantum operation.
 14. The method of claim 13, wherein: aligning theshuttered laser to the ion in the ion trap includes aligning a firstcomponent of the shuttered laser to the ion in the ion trap; andaligning the shuttered laser to the additional ion in the additional iontrap includes aligning a second component of the shuttered laser to theadditional ion in the additional ion trap.
 15. The method of claim 13,wherein the method includes detecting the light fluoresced from only asingle one of the ion and the additional ion at a time.
 16. The methodof claim 8, wherein: shuttering the laser includes shuttering a laserbeam emitted by a single laser; and aligning the shuttered laser to theion in the ion trap includes aligning the shuttered laser beam emittedby the single laser to the ion in the ion trap such that the ionfluoresces light and/or performs a quantum operation when the ion isilluminated by the shuttered laser beam emitted by the single laser. 17.An apparatus for single ion addressing, comprising: a first cellconfigured to: set a frequency and a polarization of a laser; andshutter the laser; and a second cell inside a vacuum and configured to:align the shuttered laser to an ion in an ion trap such that the ionfluoresces light and/or performs a quantum operation; and receive thelight fluoresced from the ion.
 18. The apparatus of claim 17, whereinthe apparatus includes a third cell configured to: receive the lightfluoresced from the ion from the second cell; and detect the lightfluoresced from the ion.
 19. The apparatus of claim 17, wherein thefirst cell is outside the vacuum.
 20. The apparatus of claim 17, whereinthe second cell is configured to terminate the shuttered laser after theshuttered laser is aligned to the ion in the ion trap.